p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method
نویسندگان
چکیده
Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed conductivity and evaluation of Zn activation energy by means electrical transport measurements. In this paper, ammonothermal crystallization bulk GaN:Zn monocrystals reported. Despite a high doping level (up 2 × 1020 cm?3), with hole concentration low 4 1015 cm?3 room temperature mobility about 3 cm2/V s was observed. A deep nature the acceptor proved, ionization can exceed 260 meV. addition, conduction impurity band appeared temperatures temperature.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0038524